Description:

Diode, Infrared Emitter; Side-Emitting Plastic IR Component; 880 nm; 1.7 V; 0.7

Description:

Diode, Infrared Emitter; T-1; 935 nm; 1.5 V; 20 mA; -55 degC; 125 degC; 70 mW;

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

PHOTODARLINGTON COAXIAL

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

Detector, Phototransistor, Side-LookingPlastic Package, 50 Degree, 0.4V, 100

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

OPL550 IR Phototransistor, Through Hole3-Pin Side Looker package

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

Detector, Silicon Phototransistor, Compact Metal Can, Coaxial Pkg, 24 Degree

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

SENSOR TEMP RATIOMETRIC TO5

Description:

Opto SFH 309 FA-3/4 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

panele mount, open ceramic, 5 meg ohms, max 100v

Description:

Smart Pyroelectric Detector; Quad; Smart DigiPyro; programmable; TO5; Large FOV

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 3.6 X 3.6; MM

Description:

NTE Electronics, Inc.

Description:

Photoconductive Cell, CDS

Description:

Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

Detectors, Silicon Photodarlinton, TO-46 Metal, Glass Lensed Can, 12 Degree

Description:

Detector, Phototransistor; Pill Style Metal Can; NPN; 48 deg; 30 V; 0.4 V; 100

Description:

Opto BP 104 FS IR Si Photodiode, 60 deg, SMD DIP

Description:

PHOTODIODE SILICON DOME TO-46

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

DUP B&O IR RECEIVER ELKOMATIC

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, 850NM LED, REV. POL.

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

Photoconductive Cell; 32 Kilohms (Typ.); 1 Megohms (Min.); 0.80 (Typ.); 500 mW

Description:

Sensor; ZTP-315 Infrared Sensor; Thermopile; IR Sensor

Description:

Opto SFH 309 FA-4/5 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

panel mount hermetic, nm 560, a/w .37, nA 10, v 50

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

SFH 309-4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

B/U ASSY, 1173A-100 W/9FT CABLE

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 1.98 X1.98MM

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

Silicon photodiode; hermetic TO-8; flat window; IR blocking; blue; Wide field of view

Description:

880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°

Description:

SENS OPTO SLOT 3.18MM TRANS THRU