Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

Detector; TO-46; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.; 60 ns

Description:

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Detector, PhotoDarlington; TO-46; NPN; 90 deg; 15 V; 1.1 V; 0.6 mA (Min.); 250

Description:

NPN Silicon phototransistor; T1; fast response; narrow field of view

Description:

Opto SFH 203 IR + Visible Light Si Photodiode, 20 deg, Through Hole 5mm package

Description:

Opto BP 104 FS IR Si Photodiode, 60 deg, SMD DIP

Description:

Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 muA (Typ.); 0.50 nF (Typ.)

Description:

HIGH SPEED PIN DIODE TO-46,

Description:

Opto SFH 225 FA IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

SMART-DUPLINE PIR DETECTOR 90° LIGHT REV.3

Description:

Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;

Description:

OPTICAL INTERRUPTER, SIDE LOOKER, TRANSISTOR, BULK

Description:

PHOTODARLINGTON COAXIAL

Description:

Sensor; ZTP-135SR Infrared Sensor; Thermopile; IR Sensor

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

SIX ELEMENT SMD PHOTODIODE ARRAY,

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

SFH 309-5 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

CNY74-2H DC Input Transistor Output Dual Optocoupler, Through Hole, 8-Pin PDIP

Description:

Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view

Description:

ULTRAVIOLET METAL CAN LED - 385NM

Description:

PHOTO TRANSISTOR END LOOKER

Description:

565 07 S 7W Lighting Controller Switch; Surface Mount; 220 V

Description:

PHOTOLOGIC LATERAL,

Description:

Opto SFH 3410 -1/2 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100

Description:

PHOTODARL SILCN NPN FLAT SD LOOK

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Diode, Infrared Emitter; Side Emitting Plastic; 935 nm; 1.5 V; 50 mA; -40 degC

Description:

Sensor, Photodiode Dectetor, Silicon, Bulk Pack

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

Photocell; 20 M (Min.); 550 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

PILLGAALAS IFRARED EMITTING DIODE

Description:

Photodiode, Hermetic Packaging

Description:

Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC

Description:

Opto SFH 309 FA 24 deg IR Phototransistor, Through Hole 2-Pin 3mm (T-1) package

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

PIN Photodiode, 5mm, Half Angle 10deg

Description:

Phototrans. array, 6 elem, +/-18deg, BPX 86

Description:

Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K

Description:

NTE Electronics, Inc.

Description:

HP Cooled PbS 3x3 Detector

Description:

PHOTODIODE COAXIAL

Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC

Description:

PHOTODARL SILICON NPN SIDE LOOK

Description:

Opto SFH 205 F IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

Photoconductive Cell, Hermetically Sealed, TO-18