Description:

Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy

Description:

Infrared Emitting Diode; GaAlAs Flat Lens; 935nm; 104deg beam; RoHS

Description:

IR T-1¾ Phototransistor 20°, SFH313FA-2/3

Description:

Phototransistor, 10 Elements, 18deg, BPX80

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

SMART-DUPLINE 44X44 PIR DETECTOR 90° REV.2

Description:

Opto SFH 205 F IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

EMITTER IR 935NM 50MA T-1

Description:

Diode, Infrared Emitter; Metal Can Coaxial; 880 nm; 1.8 V; 20 mA; -55 degC; 75

Description:

EE-SX384 Through Hole Slotted Optical Switch, Phototransistor Output

Description:

CNY74-2H DC Input Transistor Output Dual Optocoupler, Through Hole, 8-Pin PDIP

Description:

Opto SFH 3605-3/4 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin

Description:

Sensor, Phototransistor Detector, Silicon, Tape & Reel, Upright

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

Opto SFH 325 FA SIDELED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing

Description:

OP803SL Phototransistor, Through Hole 3-Pin TO-18 package

Description:

PHOTODARLINGTON NPN 935NM SIDELK

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

Infrared Emitter, GaAs Diode, 890 nm, 16.0 mW/cm2, TO-18, TO-46

Description:

Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm

Description:

Infrared Emitter, GaAs Diode, 890 nm, 0.6 mW/cm2, OP140

Description:

Si PIN photodiode, DIP, 120deg, filt, BPW34F

Description:

Low Power Digital Pyroelectric Detector; Low Power DigiPyro; TO5; motion sensing

Description:

Photoconductive Cell, CdS ceramic open cell in a panel mount assembly

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

NPN Silicon phototransistor; hermetic TO-46; fast response; wide field of view

Description:

Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response

Description:

PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55

Description:

PIN PHOTODIODE LOW PROFILE ST,

Description:

AMBIENT LIGHT SENSOR PHOTODIODE PIN CHIP 540NM 3-PIN SMD T/R

Description:

Cooled PbSe 2x2 Detector

Description:

HI POWER OUTMED SPEEDTO-46 FLAT LENS

Description:

PIN Photodiode, SMT, 60deg, filt, BP104FAS

Description:

Phototransistor, 5mm, SFH 314

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Detector, Phototransistor, Side-LookingPlastic Package, 50 Degree, 0.4V, 100

Description:

Opto SFH 3401 120 deg IR + Visible Light Phototransistor, Smnt 3-Pin DIP package

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

LED, Infrared; GaAs; Pill Pack. PCB solder; 935mm wavelength; RoHS

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

BPW21 visible light photodiode

Description:

Phototransistor; Compact Metal Can Coaxial Package; NPN; 0.4 V (Sat.); 100 nA

Description:

OPB972T55 Through Hole Slotted Optical Switch, Transistor Output

Description:

Detector, Silicon Photodarlinton, TO-46Metal, Flat Window Can, 90 Degree

Description:

NTE Electronics, Inc.

Description:

SLOTTED OPTICAL SWITCHPHOTOLOGIC

Description:

SD5421-002 IR Si Photodiode, 18 deg, Through-hole TO-46