Description:

OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm

Description:

Diode, Infrared Emitter; Side Emitting Plastic; 935 nm; 1.5 V; 50 mA; -40 degC

Description:

880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°

Description:

PHOTOTRNSISTR NPN 935NM SIDELOOK

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing

Description:

TSSP77P38TT, 38kHz IR Detector, 940nm +/-50deg, 40m Range, 2.5V - 5V, SMT, 6.8x3x3.2mm

Description:

Opto BPY 62 16 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

TO-46GAALAS IFRARED EMITTING DIODE

Description:

PLASTIC PD TO-18 MOUNTED IN SMA RECEPTACLE, TRAY

Description:

PHOTODARLINGTON NPN 890NM TO-18

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

SIX ELEMENT SMD PHOTODIODE ARRAY,

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

PHOTODARL SILICON NPN SIDE LOOK

Description:

WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

OP132 OP130 Infrared Emitting Diode, 935nm, TO-46 Through Hole package

Description:

PHOTO TRANSISTOR END LOOKER

Description:

Infrared Emitter, GaAs Diode, 890 nm, 2.0 mW/cm2, TO-46

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

3 CHANNEL OPTICAL COMPARATOR,

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 1.73 X1.73MM

Description:

To-5 Photocells Plastic Encapsulated

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Opto SFH 3710-2/3 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin

Description:

Detector, Phototransistor, Side-LookingPlastic Package, 50 Degree, 0.4V, 100

Description:

PHOTOLOGIC TO-18,

Description:

Phototrans. array, 4 elem, +/-18deg, BPX 84

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

Pepperl + Fuchs

Description:

Silicon photodiode; 6mm ceramic; blue; very low dark current; wide field of view

Description:

PHOTOLOGIC LATERAL,

Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Sensor; ZTP-135H Infrared Sensor; Thermopile; IR Sensor

Description:

Opto SFH 2430 IR + Visible Light Si Photodiode, 60 deg, SMD DIP

Description:

Cooled PbSe 2x2 Detector

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

PIN Photodiode, SMT, 60deg, filt, BP104FAS

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

Photodiode, Solderable Planar; 0.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.)

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

Opto BPX 81-3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

HFD3065-002/BBA PIN diode, 5nA 50Vr 950nm

Description:

Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

DUP B&O IR RECEIVER ELKOMATIC