Description:

panele mount, open ceramic, 5 meg ohms, max 100v

Description:

NTE Electronics, Inc.

Description:

INFRARED PHOTO DARLINGTON ; PLCC-2 PKG, CLEAR, EPOXY

Description:

Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K

Description:

SFH 309-5/6 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, 940NM LED

Description:

CNY74-2H DC Input Transistor Output Dual Optocoupler, Through Hole, 8-Pin PDIP

Description:

PHOTOTRNSISTR NPN 935NM SIDELOOK

Description:

Description:

PHOTOLOGIC HERMETIC SENSOR,

Description:

PHOTOCELL, CDS, .2X.169IN.

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

Smart Pyroelectric Detector; Dual-Element; Smart DigiPyro; fully programmable; TO5

Description:

SMART-DUPLINE 55X55 PIR DETECTOR 90°+LUX REV.2

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18

Description:

PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

SMD, NON-FOCUSED, MINI-REFLECTIVE IR SENSOR

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm

Description:

Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy

Description:

BPX 81-2/3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

Opto SFH 313 FA 20 deg IR Phototransistor, Thru Hole 2-Pin 5mm(T-1 3/4)package

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

Photoconductive Cell, Hermetically Sealed, TO-8

Description:

SMT refl Sensor w/LED Emitter, SFH9240

Description:

ULTRAVIOLET METAL CAN LED - 415NM

Description:

Detectors, Silicon Photodarlinton, TO-46 Metal, Glass Lensed Can, 12 Degree

Description:

Sensor, Infrared Emitting Diode, AIGaAs, Tape & Reel, Inverted

Description:

Sensor, Hall Effect, 5 to 12V, Board Mount, 25 mA

Description:

Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response

Description:

EMITTER IR 935NM 50MA T-1

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

TO-46GAALAS IFRARED EMITTING DIODE

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

Small area planar silicon photodiode ina lensed; dual lead TO-46 package

Description:

SFH 9500 Surface Mount Slotted Optical Switch, Phototransistor Output

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

TO-46GAALAS IFRARED EMITTING DIODE

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP 570NM 2-PIN T-1

Description:

Detector, Silicon Photodarlinton, TO-46Metal, Flat Window Can, 90 Degree

Description:

Cooled PbSe 2x2 Detector

Description:

OP644SL Phototransistor 2-Pin Pill package