Description:

Photocell; 0.40 Megohms (Min.); 515 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-

Description:

SMART-DUPLINE INDOOR PIR SENSOR+LUX REV.2

Description:

Silicon Photodiode; clear; T-1 3 #4 flat package; Integral IR rejection filter

Description:

Sensor, Photodiode Dectetor, Silicon, Bulk Pack

Description:

OP280 OP280 IR Emitting Diode, 890nm, PLCC 2 SMD package

Description:

Small area planar silicon photodiode ina lensed; dual lead TO-46 package

Description:

NTE Electronics, Inc.

Description:

OPTICAL INTERRUPTER, SIDE LOOKER, TRANSISTOR, BULK

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

Silicon photodiode; lateral; fast response; low dark current; wide field of view

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

HP Cooled PbS 3x3 Detector

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

NTE Electronics, Inc.

Description:

Sensor; ZTP-115M Infrared Sensor; Thermopile; IR Sensor

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

Detector, Thermopile TO-5 1.2 mm x 1.2 mm 20 V/W 3.8 mm

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

Smart Pyroelectric Detector; Dual-Element; Smart DigiPyro; TO5 housing

Description:

PHOTOLOGIC HERMETIC SENSOR,

Description:

Phototransistor, SMT with lens, SFH3219

Description:

NTE Electronics, Inc.

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

Opto SFH 3410 -2/3 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-5

Description:

Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.8 mV/ degC (Typ.); 5.0

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18

Description:

NTE Electronics, Inc.

Description:

EMITTER IR 890NM 100MA TO-46

Description:

Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Sensor; ZTP-101T Infrared Sensor; Thermopile; IR Sensor

Description:

ULTRAVIOLET METAL CAN LED - 405NM

Description:

PHOTODARLINGTON NPN 890NM TO-18

Description:

Diode, Infrared Emitter; Side-Emitting Plastic IR Component; 880 nm; 1.7 V; 0.7

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

Opto SFH 2500 FA IR Si Photodiode, 15 deg, SMD SMR

Description:

LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK

Description:

IR TO18 PIN Photodiode 80°, BPX65

Description:

Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.

Description:

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

Photoconductive Cell; 16 Kilohms (Typ.); 500 Kilohms (Min.); 0.75 (Typ.)

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.5 nW/cm2, Miniature "Pill" Pak

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)