Description:

SIX ELEMENT SMD PHOTODIODE ARRAY ON TAPE,

Description:

PIN Photodiode, SMT, 60deg, filt, BP104FAS

Description:

Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

PHOTOTRANSISTOR NPN 890NM TO-18

Description:

PHOTOLOGIC HERMETIC SENSOR,

Description:

NTE Electronics, Inc.

Description:

PHOTOCELL, CDS, .2X.169IN.

Description:

PHOTO TRANSISTOR END LOOKER

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV

Description:

NTE Electronics, Inc.

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18

Description:

Photoconductive Cell; 8 Kilohms (Typ.); 200 Kilohms (Min.); 0.75 (Typ.); TO-8

Description:

EMITTER IR 890NM 100MA TO-46

Description:

ULTRAVIOLET METAL CAN LED - 405NM

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

Opto BPX 81-3 36 IR+Visible Light Phototransistor, Through Hole 2-Pin DIP package

Description:

Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 muA (Typ.); 0.50 nF (Typ.)

Description:

COMET, 6 PERFECT PROX, IR, DC, CABLE

Description:

IR TO18 PIN Photodiode 80°, BPX65

Description:

DIODE, IR EMITTING, 30 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PHOTOLOGIC LATERAL,

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors

Description:

Sensor, Opto Switch Assembly, Transmissive, Single Channel, 5.1mm, 30V, 50mA

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

Opto SFH 313 FA 20 deg IR Phototransistor, Thru Hole 2-Pin 5mm(T-1 3/4)package

Description:

PHOTOLOGIC LATERAL,

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

SFH 309-4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV

Description:

PLASTIC ENCAPSULATED CERAMIC PKG, TO-18

Description:

Opto SFH 325 FA-3/4 SIDELED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

Opto SFH 309 FA-3/4 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

IR T-1¾ Phototransistor 20°, SFH313FA-2/3

Description:

Dual-Element Pyroelectric Detector, TO5housing -for intrusion alarm

Description:

Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V

Description:

Phototransistor, Silicon, TO-18 Metal Can

Description:

Photocell; 20 M (Min.); 550 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

panel mount hermetic, 5 meg ohms, max 100v

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

Emitter, Infrared Diode, Side-Looking Plastic Pkg, 10 Degree, 20mA Forward Cur.