Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

PHOTOLOGIC LATERAL,

Description:

EMITTER IR 890NM 100MA MINI-PILL

Description:

Opto SFH 3605-3/4 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin

Description:

SFH 309-5/6 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

SFH 309-4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Photodiode, Solderable Planar; 1.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.); 1

Description:

880 nm IRED lateral; 4.57x1.65 mm; 2.5 mWoutput power; emission profile of ±25°

Description:

Sensor; ZTP-101T Infrared Sensor; Thermopile; IR Sensor

Description:

Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;

Description:

PIN DIODE TO-18,

Description:

Diode, Infrared Emitter; Metal Can Coaxial; 880 nm; 1.8 V; 20 mA; -55 degC; 75

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

PHOTOTRANSISTOR NPN 890NM TO-18

Description:

Infrared Emitter, GaAs Diode, 890 nm, 16.0 mW/cm2, TO-18, TO-46

Description:

Silicon photodiode; 6 mm ceramic; fast response; dark current; wide field of view

Description:

DUP PIR DETECTOR WALL OPUS

Description:

SFH 325-3/4 SIDELED 120 IR+Visible Light Phototransistor, Smnt 2-Pin PLCC package

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.5 nW/cm2, Miniature "Pill" Pak

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5; for motion sensing; large FOV

Description:

SFH 309-3/4 24 Full Spectrum Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

Sensor, Phototransistor Detector, Silicon, Surface Mount Pkg, Glass Lens

Description:

LED, IR, SMD, PLCC2, FLAT LENS, REEL

Description:

OP240C IR LED, 890nm, Side Looker Through Hole package

Description:

Infrared Emitting Diode; GaAs; 2 Amp; T-1-3/4 package; RoHS

Description:

Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy

Description:

Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

Small area planar silicon photodiode ina lensed; dual lead TO-46 package

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

HIGH SPEED PIN DIODE TO-46,

Description:

Phototransistor, 5mm, SFH 314

Description:

TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package

Description:

EMITTER IR 935NM 50MA T-1

Description:

NTE Electronics, Inc.

Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

PHOTO TRANSISTOR COAXIAL

Description:

Opto SFH 3710-2/3 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin

Description:

NTE Electronics, Inc.

Description:

Opto SFH 3410 -2/3 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

Photoconductive Cell, Hermetically Sealed, TO-18

Description:

NTE Electronics, Inc.

Description:

Phototransistor; Compact Metal Can Coaxial Package; NPN; 0.4 V (Sat.); 100 nA

Description:

Sensor, Thin Compact, Slot, PMS, NPN

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

Sensor, Phototransistor Detector, Silicon, Tape & Reel, Upright