Description:

PIN DIODE TO-18,

Description:

Photodiode, Solderable Planar; 0.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.)

Description:

NPN Silicon phototransistor; T1; fast response; narrow field of view

Description:

NPN Silicon phototransistor; hermetic TO-46; fast response; wide field of view

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5; for motion sensing; large FOV

Description:

PHOTO TRANSISTOR COAXIAL

Description:

Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;

Description:

Sensor; ZTP-135L Infrared Sensor; Thermopile; IR Sensor

Description:

PHOTOLOGIC HERMETIC SENSOR,

Description:

PHOTOLOGIC TO-18,

Description:

ELECTRONIC PART

Description:

Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5

Description:

Sensor; ZTP-101T Infrared Sensor; Thermopile; IR Sensor

Description:

Pepperl + Fuchs

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

PINNED PHOTO CELL

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 1000 Kilohms (Min.); 690 nm

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

TEKT5400S +/-37deg Day Light Phototransistor, Thru Hole 2-Pin Side Looker package

Description:

PosiTrack System (WCS)

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

Opto SFH 3600-3/4 MIDLED 40 deg IR + Visible Light Phototransistor, Smnt 2-Pin

Description:

Remote control for PIR handheld

Description:

OPL550 IR Phototransistor, Through Hole3-Pin Side Looker package

Description:

Photocell, Pinned

Description:

PILLGAALAS IFRARED EMITTING DIODE

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

DUPLINE PIR DETECTOR CEILING FOR PL BOX

Description:

PHOTODIODE QUAD HIGH TEMP SMD

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

DIODE, IR EMITTING, 33 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PHOTOLOGIC TO-18,

Description:

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

Infrared Emitter, GaAs Diode, 935 nm, 0.4 mW/cm2, Side Looking THD

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC

Description:

EMITTER IR 890NM 50MA T-1

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Opto SFH 3710-3/4 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin

Description:

Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA (Cont.); -55 de

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

EMITTER IR 890NM 100MA RADIAL