Description:

PHOTODIODE VERSIONOPB610

Description:

Dual-Element Pyroelectric Detector, TO5housing - for motion sensing

Description:

Dual-Element Pyroelectric Detector; TO39; Automatic light switching; Standard FOV

Description:

SENS OPTO SLOT 9.53MM TRANS C-MT

Description:

TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output

Description:

4 element PbSe Detector

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module

Description:

Photointerrupter Reflective Phototransi

Description:

IR REMOTE RECEIVER 38KHZ 35M 4-PIN SMD T/R

Description:

SFH320FA IR phototransistor

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

SD 3410-003 90 deg Phototransistor, Through Hole 3-Pin TO-46 package

Description:

PIN Photodiode, Filter, BPW34FAS R18R

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5

Description:

Silicon photodiode TO-46 spectral response between 330 and 720nm

Description:

Infrared Emitter, GaAs Diode, 890 nm, 16.0 mW/cm2, T-1 3/4

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Opto SFH 325 FA-3 SIDELED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package

Description:

880 nm IRED T-1 (5mm); 3 mW output; narrow emission profile of ±10°; GaAlAs chip

Description:

Opto SFH 309 FA-4/5 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

Infrared Emitter, GaAs Diode, 935 nm, 0.4 mW/cm2, Side Looking THD

Description:

PHOTOLOGIC LATERAL,

Description:

LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 3.6 X 3.6; MM

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

Phototransistor; NPN; 5.0 V (Min.); 6.0mA (Typ.) (Collector); 75 mW; -20 degC

Description:

PHOTOLOGIC SLOTTED OPTICAL SWITCH

Description:

EMITTER IR 935NM 100MA TO-46

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

Detector, Pyroelectric; Dual Element; 2sq-mm x 1 sq-mm; 4000 V/W (Typ.); 1%

Description:

EE-SX3081 Through Hole Slotted Optical Switch, Phototransistor Output

Description:

Opto SFH 3010 160 deg IR + Visible Light Phototransistor, Surface Mount 2-Pin

Description:

Pyroelectric Infrared Detectors - Single and Dual Channel Detectors

Description:

Photoconductive Cell; 20 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

DUP OPTICAL REPEATER INPUT MODULE

Description:

PHOTOCONDUCTIVE CELL, TO-8P PKG, 250 VOLTAGE OHMS

Description:

VSMG10850 Infrared Emitting Diode, 850nm, Side-Looking SMD package

Description:

PHOTO TRANSISTOR COAXIAL W/TAB

Description:

SFH6345 DC Input Transistor Output Optocoupler, Through Hole, 8-Pin PDIP

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

PIN DIODE TO-46,