Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

Photodiode; 150 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC

Description:

Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V

Description:

Phototransistor, Silicon, TO-18 Metal Can

Description:

Opto SFH 325 FA-3/4 SIDELED 120 deg IR Phototransistor, Smnt 2-Pin PLCC package

Description:

PHOTOTRNS SILCN NPN HERMETC PILL

Description:

Opto SFH 205 F IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

OP280 OP280 IR Emitting Diode, 890nm, PLCC 2 SMD package

Description:

Description:

PHOTODIODE COAXIAL W/TAB

Description:

BPX 38-3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

Opto SFH 3710-2/3 120 deg Full SpectrumPhototransistor, Surface Mount 2-Pin

Description:

Silicon photodiode; 6mm ceramic; blue; very low dark current; wide field of view

Description:

DigiPyro; Dual-Element Pyroelectric Detector; TO5 housing - for motion sensing

Description:

PHOTOTRNSISTR NPN 935NM SIDELOOK

Description:

PHOTOLOGIC LATERAL,

Description:

B/U ASSY, 1173A-300 W/9 ft Cable

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, POINT SOURCE, 875NM LED

Description:

Photodiode, Solderable Planar; 0.3 mA (Min.); 0.40 V (Typ.); 1.7 uA (Max.)

Description:

Sensor, Slot-Type, NPN, 5MM Distance, .3M Robot Cable

Description:

Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view

Description:

EE-SX1055 Through Hole Slotted Optical Switch, Phototransistor Output

Description:

Phototransistor, 3mm, Half Angle 25deg

Description:

PINNED PHOTO CELL

Description:

IR EMITTER HIGH POWR 950NM 5MM 30DEG

Description:

Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg

Description:

PHOTO TRANSISTOR FLAT LENS

Description:

SIX ELEMENT SMD PHOTODIODE ARRAY,

Description:

PHOTODARLINGTON NPN 935NM SIDELK

Description:

880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°

Description:

Sensor; ZTP-115S Infrared Sensor; Thermopile; IR Sensor

Description:

Infrared Transceivers SIR 115.2kbits Top View; IrDA

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.8 mV/ degC (Typ.); 5.0

Description:

Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current

Description:

OP802WSL Phototransistor, Through Hole 3-Pin TO-18 package

Description:

TSSP77P38TT, 38kHz IR Detector, 940nm +/-50deg, 40m Range, 2.5V - 5V, SMT, 6.8x3x3.2mm

Description:

PHOTO TRANSISTOR END LOOKER

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

Opto SFH 225 FA IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

PHOTODARLINGTON SILICON NPN TO18

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

BP 103 110 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

Photologic Hermetic Sensor TO-18

Description:

Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV

Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC