Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5

Description:

Photoconductive Cell, Hermetically Sealed, TO-8

Description:

Photocell, Pinned

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, HI-PWR 850NM LED

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

Diode, Infrared Emitter; TO-46; 935 nm; 1.7 V; 100 mA; -55 degC; 125 degC; 150

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

PHOTOCELL

Description:

Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV

Description:

Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5

Description:

PILLGAALAS IFRARED EMITTING DIODE

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

BPW85 +/-25 IR+Visible Light Phototransistor, Through Hole 2-Pin 3mm(T-1)package

Description:

PHOTOCELL

Description:

INFRARED PHOTO DARLINGTON ; 0805 PKG, WATER CLEAR LENS, FLAT

Description:

SILICON PHOTODIODES

Description:

PHOTO TRANSISTOR COAXIAL

Description:

Lighting Controller Handset; Flush Mount; 220 - 240 V; 76mm Dia.

Description:

ULTRAVIOLET METAL CAN LED - 400NM

Description:

INFRARED PHOTO DARLINGTON ; 1210 PKG, WATER CLEAR LENS, DOME

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Degree, 20 mA Forward Current

Description:

PHOTODARLINGTON SILICON NPN TO18

Description:

Pulsed Emitter with Driver

Description:

Photologic Hermetic Sensor TO-18

Description:

Diode, Infrared Emitter, Side-Emitting, Plast Pkg, 50 Degree, 20mA Forward Cur.

Description:

Photoconductive Cell; 20 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC

Description:

Infrared Emitter, GaAs Diode, 935 nm, 3.0 mW/cm2, TO-46

Description:

Opto BPW 34 FAS IR Si Photodiode, 60 deg, SMD DIP

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V

Description:

PHOTO TRANSISTOR FLAT LENS

Description:

Smart Pyroelectric Detector; Quad; Smart DigiPyro; programmable; TO5; Large FOV

Description:

EMITTER IR 935NM 100MA TO-46

Description:

Thermopile Modules with Integrated Signal Processing (TPMI)

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4

Description:

Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18

Description:

Opto BP 104 S IR + Visible Light Si Photodiode, 60 deg, SMD DIP

Description:

PHOTODIODE SILICON PIN SMD

Description:

Photodiode, Silicon Pin; 60 muA (Typ.); 390 mV (Typ.); 2 nA (Typ.); -55 degC

Description:

TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output

Description:

INFRARED LED; PLCC-2 PKG, CLEAR, SILICONE, 850NM LED, REV. POL.

Description:

PHOTOLOGIC LATERAL,

Description:

SFH3410 human eye char phototransistor

Description:

Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm

Description:

Optocoupler, High Speed; DIP-8; -55 degC; 100 degC; -1.7 mV/ degC (Typ.); 5.0

Description:

Detector, Phototransistor; T-1; NPN; 18deg; 30 V; 0.4 V; 17.5 mA (Max.); 100 n

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors