Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC

Description:

ULTRAVIOLET METAL CAN LED - 400NM

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

Phototrans. array, 5 elem, +/-18deg, BPX 85

Description:

Opto BPX48 IR + Visible Light Si Photodiode, 60 deg, Through-hole DIP

Description:

PHOTO TRANSISTOR COAXIAL W/TAB

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

PHOTOTRANS SILICON NPN SIDE LOOK

Description:

Pyroelectric Infrared Detectors - Single and Dual Channel Detectors

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

HERMETIC PHOTOCELL

Description:

PHOTO TRANSISTOR COAXIAL

Description:

B/U ASSY, 1173A-100 W/9FT CABLE

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

EMITTER IR 935NM 100MA TO-46

Description:

Detector, Phototransistor; TO-18; NPN; 12 deg; 30 V; 0.4 V; 4 mA (Max.); 100 nA

Description:

Pulsed Emitter with Driver

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)

Description:

LAT. TM PHOTOTRANS. W/ 2M RBE SENSOR CHIP MOLDED BLACK

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors

Description:

Opto BPW 34 FAS IR Si Photodiode, 60 deg, SMD DIP

Description:

PHOTODIODE QUAD HIGH TEMP SMD

Description:

B/U ASSY, 1273A-100 W/9FT CABLE

Description:

NTE Electronics, Inc.

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5

Description:

PHOTOLOGIC SLOTTED OPTICAL SWITCH

Description:

S.M. LARGE AREA PHOTODIODE,

Description:

ULTRAVIOLET METAL CAN LED - 380NM

Description:

PHOTODIODE SILICON PIN SMD

Description:

Sensor, Phototransistor Detector, Silicon, 3.0-8.0 Light Current (mA)

Description:

NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view

Description:

Sensor; Infrared; Emitting Diode; Side-Looking Plastic Pkg; 20mA Forward Current

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

INFRARED PHOTO DARLINGTON; 1206 PKG, WATER CLEAR LENS, FLAT

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

PHOTOCELL

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

PHOTODIODE SILICON PIN TO-18

Description:

DIODE, IR EMITTING, 33 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

SMT refl Sensor LED Emit+Phototrans, 9202

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

IR EMITTER HIGH POWR 950NM 5MM 22DEG

Description:

Diode, Infrared Emitter; T-1; 935 nm; 1.5 V; 20 mA; -55 degC; 125 degC; 70 mW;

Description:

SILICON PHOTODIODES