Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5

Description:

BPW21 visible light photodiode

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PHOTOLOGIC LATERAL,

Description:

EMITTER IR 890NM 100MA RADIAL

Description:

Sensor, Infrared Emmitting Diode, Surface Mount Pkg, Glass Lens, AIGaAs

Description:

Photoconductive Cell; 16 Kilohms (Typ.); 500 Kilohms (Min.); 0.75 (Typ.)

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

PHOTOLOGIC SENSOR,

Description:

Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 1000 Kilohms (Min.); 690 nm

Description:

PHOTOCELL

Description:

PHOTO TRANSISTOR PLASTIC TO-18

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 1.00 X1.00MM

Description:

Infrared Emitter, GaAs Diode, 890 nm, 16.0 mW/cm2, T-1 3/4

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

PHOTOLOGIC TO-18,

Description:

SMART-DUPLINE LUX SENSOR REV.3

Description:

Opto BPX48 IR + Visible Light Si Photodiode, 60 deg, Through-hole DIP

Description:

Opto SFH 2701 IR + Visible Light Photodiode, 60 deg, SMD Chip LED

Description:

Photocell; 100 Kilohms (Min.); 550 nm; 170 Vpeak (Max.); 500 mW @ 25 degC; TO-

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

SILICON PHOTODIODES

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

LEDPOINT SOURCEEND LOOKER FLAT

Description:

Ambient PbS 1x1 Detector

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

Description:

Detector, Pyroelectric; Dual Element; 2sq-mm x 1 sq-mm; 4000 V/W (Typ.); 1%

Description:

Photointerrupter Reflective Phototransi

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

SILICON PHOTO TRANSISTOR SENSOR

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

PHOTO TRANSISTOR COAXIAL

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

SFH6345 DC Input Transistor Output Optocoupler, Through Hole, 8-Pin PDIP

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC

Description:

Sensor; ZTP-135 Infrared Sensor; Thermopile; IR Sensor

Description:

NTE Electronics, Inc.

Description:

BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package

Description:

Photoconductive Cell, Hermetically Sealed, TO-8

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

Diode, Infrared Emitter; T-1; 935 nm; 1.5 V; 20 mA; -55 degC; 125 degC; 70 mW;

Description:

Pyroelectric Infrared Detectors - Single and Dual Channel Detectors

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18