Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

ULTRAVIOLET METAL CAN LED - 425NM

Description:

Integrated Detector

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

Sensor, Hall Effect, Ceramic, Single Pole, 4.5 to 24V, 25 mA

Description:

DUP OPTICAL REPEATER INPUT MODULE

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

PIN PHOTODIODE COND. PLASTIC ST,

Description:

SMART-DUPLINE PL PIR DETECTOR 90° LIGHT+LUX REV.2

Description:

Photo Diode, Planar; 1.2 mA (Typ.); 0.40 V (Typ.); 3.3 muA (Max.); 0.7 nF (Typ.)

Description:

PHOTODARLINGTON SILICON NPN T-1

Description:

DIP2 120deg Si PIN photodiode, BPW34FA

Description:

PHOTOTRNS NPN PLASTIC SIDE LOOK

Description:

INFRARED PHOTO DARLINGTON ; 1210 PKG, WATER CLEAR LENS, DOME

Description:

Opto BPW 34 FAS IR Si Photodiode, 60 deg, SMD DIP

Description:

WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC

Description:

DIODE, IR EMITTING, 38 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

Opto SFH 3410 -3/4 120 deg Full Spectrum Phototransistor, Smnt 3-Pin DIP package

Description:

PLCC-2 PKG.PHOTODIODEEPOXYCLEARREEL

Description:

Lighting Controller Handset; Flush Mount; 220 - 240 V; 76mm Dia.

Description:

Infrared Emitter, GaAs Diode, 935 nm, 3.0 mW/cm2, TO-46

Description:

PHOTODIODE SILICON PIN SMD

Description:

PHOTOLOGIC LATERAL,

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.0 mW/cm2, TO-18, TO-46

Description:

Photoconductive Cell; 32 Kilohms (Typ.); 1 Megohms (Min.); 0.80 (Typ.); 500 mW

Description:

Silicon photodiode TO-46 spectral response between 330 and 720nm

Description:

Diode, Infrared Emitter; Metal Pill Style; 880 nm; 1.8 V; 75 mA; -55 degC; 125

Description:

INFRARED PHOTOTRANSISTOR ; 1210 PKG, WATER CLEAR LENS, DOME

Description:

Diode, Infrared Emitter, Side-Emitting, Plast Pkg, 50 Degree, 20mA Forward Cur.

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V

Description:

Opto SFH 309 FA-5 24 deg IR Phototransistor, Thru Hole 2-Pin 3mm (T-1) package

Description:

PHOTOLOGIC TO-18,

Description:

EMITTER IR 890NM 50MA T-1

Description:

Phototrans. array, 9 elem, +/-18deg, BPX 89

Description:

TCST2202 Through Hole Slotted Optical Switch, Phototransistor Output

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

SENSOR PHOTOLOGIC SIDE LOOKING

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

PHOTODIODE QUAD HIGH TEMP SMD

Description:

TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output

Description:

INFRARED PHOTO DARLINGTON ; 1206 PKG, BLACK LENS, FLAT

Description:

BPX 43-4/5 30 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

SILICON PHOTO TRANSISTOR SENSOR

Description:

DUP PIR DETECTOR CEILING OPUS

Description:

Detector; TO-46; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.; 60 ns

Description:

PHOTODIODE VERSIONOPB610

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

LEDPOINT SOURCEEND LOOKER FLAT

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 1.00 X1.00MM

Description:

TO-18NPN SILICON PHOTO TRANSISTOR