Description:

Photologic Hermetic Sensor TO-18

Description:

Phototransistor, 2 Elements, 18deg, BPX82

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

SENSOR PHOTOLOGIC HERMETIC TO-18

Description:

Cooled PbS 3x3 Detector

Description:

TSHG8200 IR LED, 830nm, T-1 3/4 (5mm) Through Hole package

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm

Description:

EMITTER IR 935NM 100MA TO-46

Description:

Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current

Description:

Large area planar silicon; two lead ceramic; coated with a layer of clear epoxy

Description:

TCRT1000, Through Hole Reflective Optical Sensor, Phototransistor Output

Description:

Photodiode, Planar; TO-46; 70 muA (Typ.); 0.40 V (Typ.); 1 nA (Max.); -40 degC

Description:

Phototransistor 5mm 3pin, SFH 303 FA-3/4

Description:

Photodiode; 925nm (typ.); 0.6A/W; drk cur 40nA

Description:

photo cell

Description:

SILICON PHOTO TRANSISTOR SENSOR

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC

Description:

THRU-BEAM DETECTOR CABLE VERSION, DC 100 FT

Description:

IR Si PIN photodiode, SMT, filter, BPW34FS

Description:

PHOTOTRANS. W/BASE-EMITTER RES. PLAS TO-46

Description:

Diode, Infrared Emitter; Metal Pill Style; 880 nm; 1.8 V; 75 mA; -55 degC; 125

Description:

PHOTO TRANSISTOR FLAT LENS

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package

Description:

PILLGAALAS IFRARED EMITTING DIODE

Description:

Opto SFH 225 FA IR Si Photodiode, 60 deg, Through Hole 5mm package

Description:

Silicon photodiode; lateral; fast response; low dark current; wide field of view

Description:

Opto SFH 2430 IR + Visible Light Si Photodiode, 60 deg, SMD DIP

Description:

SD5491-005 12 deg Phototransistor, Through Hole 3-Pin TO-18 package

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18

Description:

DIODE, IR EMITTING, 56 KHZ, ANGLE OF HALF TRANSMISSION DISTANCE +/-45DEG/C

Description:

PILLNPN SILICON PHOTO TRANSISTOR

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

DUP B&O IR RECEIVER ELKOMATIC

Description:

ULTRAVIOLET METAL CAN LED - 405NM

Description:

Photoelectric Sensor, Diff Reflect, FwdView, 8 in Sense Range, 6 ft cable

Description:

Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V

Description:

INFRARED PHOTOTRANSISTOR ; 0805 PKG, BLACK LENS, FLAT

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

NTE Electronics, Inc.

Description:

Photoconductive Cell; 8 Kilohms (Typ.); 200 Kilohms (Min.); 0.75 (Typ.); TO-8

Description:

PHOTOTRANS SILICON NPN HERM TO18

Description:

Sensor, Slot Dark-On, T-Shape, Through Beam, NPN, 5 to 24VDC, 5mm, 35 mA

Description:

Pyroelectric Infrared Detectors - Dual Element Detectors

Description:

Silicon photodiode; 6 mm ceramic; fast response; dark current; wide field of view

Description:

BPX 38-3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package