Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC

Description:

SIX ELEMENT SMD PHOTODIODE ARRAY,

Description:

PHOTOTRANSISTOR LATERAL DARK PACKAGE

Description:

Photointerrupter Reflective Phototransi

Description:

PHOTOTRANS SILICON PIN SIDE LOOK

Description:

NPN Silicon phototransistor; hermetic TO-46; fast response; wide field of view

Description:

TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package

Description:

LED, Infrared; GaAs; Pill Pack. PCB solder; 935mm wavelength; RoHS

Description:

PHOTO TRANSISTOR END LOOKER

Description:

Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg

Description:

Photocell; 0.40 Megohms (Min.); 515 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-

Description:

Sensor, Thin Compact, Slot, PMS, NPN

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

PLASTIC PD TO-18 MOUNTED IN SMA RECEPTACLE, TRAY

Description:

CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5

Description:

Photodiode; 150 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC

Description:

ULTRAVIOLET METAL CAN LED - 385NM

Description:

Optoelectronic, Photodiode; Avalanche; 275-450 V; TO-5

Description:

PIN Photodiode, BPW34S R18R

Description:

Sensor; ZTP-101T Infrared Sensor; Thermopile; IR Sensor

Description:

Photoelectric Sensor, Diff Reflect, FwdView, 8 in Sense Range, 6 ft cable

Description:

Sensor, Phototransistor Detector, Silicon, Tape & Reel, Inverted

Description:

Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60

Description:

BPX 43-3/4 30 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package

Description:

WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC

Description:

PHOTODIODE COAXIAL W/TAB

Description:

Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 1000 Kilohms (Min.); 690 nm

Description:

Photodiode, Hermetic Packaging

Description:

NTE Electronics, Inc.

Description:

880 nm IRED lateral; 4.57x1.65 mm; 2.5 mWoutput power; emission profile of ±25°

Description:

PHOTOTRNS SILICN NPN HERMET PILL

Description:

Infrared Emitter, GaAs Diode, 890 nm, 3.5 nW/cm2, Miniature "Pill" Pak

Description:

slotted optical switch HOA0961-T51

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

SMD Dual-Element Analog Pyroelectric Detector; DigiPyro; CLCC 5 mm housing

Description:

Opto SFH 221 IR + Visible Light Si Photodiode, 55 deg, Through-hole TO-5

Description:

HFD3065-002/BBA PIN diode, 5nA 50Vr 950nm

Description:

B/U ASSY, 1273A-300 W/9 CABLE

Description:

Sensor, Photodiode Detector, Silicon, Tape & Reel, Upright

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 550NM 2-PIN SMD T/R

Description:

3 CHANNEL OPTICAL COMPARATOR,

Description:

ULTRAVIOLET METAL CAN LED - 390NM

Description:

Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg

Description:

SWITCH SLOTTED OPTICAL HS PCB

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

PINNED PHOTOCELL

Description:

Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV

Description:

Phototrans. array, 4 elem, +/-18deg, BPX 84

Description:

SLOTTED OPTICAL SWITCH PHOTOLOGIC