Description:

Photoconductive Cell; 24 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC

Description:

PHOTOLOGIC TO-18,

Description:

PHOTO TRANSISTOR COAXIAL

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

INFRARED PHOTO DARLINGTON ; 1210 PKG, WATER CLEAR LENS, DOME

Description:

EMITTER IR 935NM 100MA TO-46

Description:

Phototrans. array, 9 elem, +/-18deg, BPX 89

Description:

PHOTO TRANSISTOR COAXIAL W/TAB

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

PHOTO TRANSISTOR PLASTIC T-1 3/4

Description:

Optoelectronics, Optocoupler; R(on) 0.90ohms, R(off) 500Kohms; V(f), 2.0V; I(f), 40mA;

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

SENS OPTO SLOT 3.18MM TRANS THRU

Description:

Infrared Emitter, GaAs Diode, 935 nm, 3.0 mW/cm2, TO-46

Description:

PHOTODIODE, SOLDERABLE PLANAR; 0.3 MA (MIN.); 0.40 V (TYP.); 1.7 UA (MAX.)

Description:

EMITTER IR 890NM 50MA RADIAL

Description:

Opto SFH 310 FA-2/3 50 deg IR Phototransistor, Thru Hole 2-Pin 3mm(T-1)package

Description:

DUP PIR DETECTOR CEILING OPUS

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

PHOTO TRANSISTOR PLASTIC T-1

Description:

PHOTOTRANS. W/BASE-EMITTER RES.

Description:

DIP2 120deg Si PIN photodiode, BPW34FA

Description:

HP Cooled PbSe 2x2 Detector

Description:

EMITTER IR 935NM 50MA RADIAL

Description:

Photoconductive Cell, Hermetically Sealed, TO-5

Description:

Silicon photodiode TO-46 spectral response between 330 and 720nm

Description:

WIREBONDERABLE PHOTODIODE CHIPS; 3.6 X 3.6; MM

Description:

HERMETIC PHOTOCELL

Description:

OPL810 IR Phototransistor, Through Hole3-Pin TO-18 package

Description:

HI POWER OUTHI SPEEDTO-46 FLAT LENS

Description:

DUPLINE PIR DETECTOR

Description:

Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d

Description:

880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°

Description:

Remote control for PIR handheld

Description:

PHOTOTRANS. W/COLLECTOR-EMITTR CAP; LATMOLD

Description:

Detector, Phototransistor; TO-18; NPN; 12 deg; 30 V; 0.4 V; 4 mA (Max.); 100 nA

Description:

Thermopile with integrated signal processing circuit

Description:

Phototrans. array, 8 elem, +/-18deg, BPX 88

Description:

TC SLOT PMS NPN L-ON L SHAPE

Description:

TO-18NPN SILICON PHOTO TRANSISTOR

Description:

SENS OPTO SLOT 3.18MM TRANS C-MT

Description:

Description:

PHOTOLOGIC LATERAL,

Description:

PHOTOLOGIC TO-18,

Description:

PHOTOTRANS SILICN NPN SIDE LOOK

Description:

Pyroelectric Infrared Detectors - Single and Dual Channel Detectors

Description:

Smart Pyroelectric Detector; Quad-Element; Smart DigiPyro; TO5; Large FOV

Description:

PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC

Description:

Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC

Description:

PILLNPN SILICON PHOTO TRANSISTOR